Dmitri Z. Garbuzov (1940 to 2006) was a Russian-born physicist and inventor, one of the pioneers of room-temperature continuous-wave diode lasers and of high-power diode lasers. Born in Sverdlovsk, he graduated from the physics department of Leningrad State University in 1962 and joined Zhores Alferov's group at the Ioffe Physical-Technical Institute in 1964, where heterojunctions in semiconductors were being studied. In 1970 his team there and a competing team at Bell Telephone Laboratories attained the first room-temperature continuous-wave diode lasers almost simultaneously. He later developed practical high-power, high-efficiency diode lasers from visible to mid-infrared wavelengths, and after perestroika built a research group in the West that served three American companies. He died in Princeton, New Jersey.
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Source Dmitri Z. Garbuzov (Wikipedia)
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Source Dmitri Z. Garbuzov (Wikipedia)Personal life, birthplaceQuote, Personal life, birthplace
Dmitri Zalmanovitch Garbuzov was born in Sverdlovsk, Russia, in 1940
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1. Dmitri Z. Garbuzov (Wikipedia)
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His father, Zalman Garbuzov, was a prominent engineer
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was one of the pioneers and inventors of room-temperature continuous-wave-operating diode lasers and high-power diode lasers
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Dmitri Z. Garbuzov (October 27, 1940, Sverdlovsk (Yekaterinburg)
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August 20, 2006, Princeton, New Jersey)
Personal life, birthplace
Dmitri Zalmanovitch Garbuzov was born in Sverdlovsk, Russia, in 1940
Invented By: Laser diode, Dmitri Z. Garbuzov article, Lead
was one of the pioneers and inventors of room-temperature continuous-wave-operating diode lasers and high-power diode lasers
Associated With: Laser diode, Dmitri Z. Garbuzov article, Lead
was one of the pioneers and inventors of room-temperature continuous-wave-operating diode lasers and high-power diode lasers
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