Igor Vsevolodovich Grekhov (10 September 1934 to 30 August 2026) was a Soviet and Russian physicist and electrical engineer and a full member of the Russian Academy of Sciences, known as one of the founders of the power semiconductor device industry in the Soviet Union. Born in Smolensk and raised in Simferopol, he studied electrical engineering at the Bauman Moscow State Technical University, worked in industry in Saransk from 1958 to 1962 and joined the Ioffe Institute in Leningrad in 1962, where he headed the Power electronics laboratory from 1982 to 2019. His work on pulsed power devices included the discovery of impact ionization fronts in high voltage junctions and, in 1982 to 1983, the invention of the Drift Step Recovery Diode and the Reversely Switch-on Dynistor. He received the Lenin Prize, two State Prizes and several Russian state orders, and co-authored four books, about 200 patents and more than 600 papers.
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Source Igor Grekhov (Wikipedia)Lead, nationalityQuote, Lead, nationality
was a Soviet and Russian physicist and electrical engineer
Also in Geography Atlas: the nationality of this subject.
Source Igor Grekhov (Wikipedia)Lead, nationalityQuote, Lead, nationality
was a Soviet and Russian physicist and electrical engineer
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1. Igor Grekhov (Wikipedia)
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He is known as one of the founders of the power semiconductor device industry
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was a Soviet and Russian physicist and electrical engineer
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10 September 1934-30 August 2026
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10 September 1934-30 August 2026
Lead, nationality
was a Soviet and Russian physicist and electrical engineer
View the SourceStep recovery diode (Wikipedia)
Invented By: Drift step recovery diode, Operation of the drift step recovery diode
invented by Russian scientists in 1981 (Grekhov et al., 1981)
Associated With: Drift step recovery diode, Step recovery diode, DSRD section
invented by Russian scientists in 1981 (Grekhov et al., 1981)
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