Chemical vapor deposition is a materials engineering process for producing thin solid films by exposing a heated substrate to gaseous chemical precursors that react or decompose at its surface, depositing a solid material layer while volatile byproducts are carried away in the gas stream. It can produce coatings and films with high purity and precise thickness control, including semiconductor layers, protective coatings and synthetic diamond, and variants such as plasma-enhanced and low-pressure chemical vapor deposition adapt the basic process for different materials and lower processing temperatures. It became a foundational technique of the semiconductor industry from the mid twentieth century onward for building up the thin films used in integrated circuits.
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Chemical vapor deposition (Wikipedia)
Wikipedia contributors, Wikimedia FoundationAssociated With: Silicon, IntroductionQuote, Associated With: Silicon, Introduction
These materials include: silicon (dioxide, carbide, nitride, oxynitride), carbon (fiber, nanofibers, nanotubes, diamond and graphene), fluorocarbons, filaments, tungsten, titanium nitride and various high-κ dielectrics.
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