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Semiconductor Doping
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Doping introduces controlled impurity atoms into a pure semiconductor crystal, usually silicon, to alter its electrical conductivity by adding either extra free electrons, called n-type doping, or electron vacancies called holes, called p-type doping. Precisely patterned regions of n-type and p-type doping, brought together, form the diode and transistor junctions that make solid-state electronics possible.
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Origin YearThe 1947 point-contact transistor relied on doped germanium; diffusion doping and, later in the 1960s, ion implantation were developed and refined across the following two decades. Core PrincipleIntroducing a controlled concentration of impurity atoms into a semiconductor crystal, by diffusion or ion implantation, to create n-type or p-type regions with altered electrical conductivity. 1 Cross-Tradition Connections
Associated With
Photolithography and doping are paired steps repeated many times in integrated circuit fabrication.
Controlled doping of germanium and later silicon is what makes a transistor junction possible.
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In the Other Atlases
Sources
1. Doping, Semiconductor (Wikipedia)
Wikipedia contributors, Wikimedia FoundationLead sectionQuote, Lead section
In semiconductor production, doping is the intentional introduction of impurities into an intrinsic (undoped) semiconductor for the purpose of modulating its electrical, optical and structural properties.
1. Doping, Semiconductor (Wikipedia)
Wikipedia contributors, Wikimedia FoundationDopant elements sectionQuote, Dopant elements section
By doping pure silicon with Group V elements such as phosphorus, extra valence electrons are added that become unbounded from individual atoms and allow the compound to be an electrically conductive n-type semiconductor. Doping with Group III elements, which are missing the fourth valence electron, creates broken bonds (holes) in the silicon lattice that are free to move. The result is an electrically conductive p-type semiconductor.
2. A History of Technology
Charles Singer, E. J. Holmyard, A. R. Hall and Trevor I. Williams, editors, Oxford University Press, 1954
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