Materials
Gallium Arsenide
GAL-ee-um AR-sun-ide
Also Known As GaAs
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Gallium arsenide is a III-V compound semiconductor with a zinc blende crystal structure and a direct band gap, which lets it emit and absorb light far more efficiently than silicon and made it the material of choice for high-frequency and optoelectronic devices even though it is more brittle and expensive to produce.
Facts
Primary UseMicrowave-frequency integrated circuits, infrared light-emitting diodes and laser diodes, solar cells, and optical windows. 1 Origin YearYear commercial production of gallium arsenide monocrystals began, not the year the compound itself was first identified. Cross-Tradition Connections
Associated With
Gallium arsenide's higher electron mobility than silicon makes it the preferred semiconductor for high-frequency and high-power transistors used in radio-frequency and satellite electronics, at a higher manufacturing cost than silicon.
In Field
Sources
1. Gallium Arsenide (Wikipedia)
Wikipedia contributors, Wikimedia FoundationLead sectionQuote, Lead section
Gallium arsenide is used in the manufacture of devices such as microwave frequency integrated circuits, monolithic microwave integrated circuits, infrared light-emitting diodes, laser diodes, solar cells and optical windows.
1. Gallium Arsenide (Wikipedia)
Wikipedia contributors, Wikimedia FoundationHistory sectionQuote, History section
Commercial production of its monocrystals commenced in 1954, and more studies followed in the 1950s.
1. Gallium Arsenide (Wikipedia)
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